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BC846S ... BC848S NPN
General Purpose Transistors NPN
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage
Dimensions / Mae in mm
20.1
6.5
6
Version 2004-04-09
Power dissipation - Verlustleistung Plastic case Kunststoffgehause
310 mW SOT-363 0.01 g
6.5
5 4
0.90.1 1.250.1
0.1
2.1
Type Code
1 2 3
Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert
2.4
6 = C1 1 = E1
5 = B2 2 = B1
4 = E2 3 = C2
Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) BC846S
Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Peak Emitter current - Emitter-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM - IEM Tj TS 65 V 80 V
Grenzwerte (TA = 25/C) BC847S
45 V 50 V 6V 310 mW 1) 100 mA 200 mA 200 mA 200 mA 150/C - 65...+ 150/C
BC848S
30 V 30 V 5V
Characteristics (Tj = 25/C)
DC current gain - Kollektor-Basis-Stromverhaltnis ) VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz Small signal current gain Kleinsignal-Stromverstarkung Input impedance - Eingangs-Impedanz Output admittance - Ausgangs-Leitwert Reverse voltage transfer ratio Spannungsruckwirkung hfe hie hoe hre hFE hFE
2
Kennwerte (Tj = 25/C)
typ. 90 ... 270 110 ... 800
typ. 220 ... 600 1.6 ... 15 kS 18 ...110 :S typ.1.5 ... 3 *10-4
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2%
12
General Purpose Transistors
BC846S ... BC848S
Characteristics (Tj = 25/C) Min. Collector saturation volt. - Kollektor-Sattigungsspg. ) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA IE = 0, VCB = 30 V IE = 0, VCB = 30 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz F - RthA fT CCB0 CEB0 100 MHz - - IEB0 - VCEsat VCEsat VBEsat VBEsat VBEon VBEon ICB0 ICB0 - - - - 580 mV - - -
1
Kennwerte (Tj = 25/C) Typ. 90 mV 200 mV 700 mV 900 mV 660 mV - - - - Max. 250 mV 600 mV - - 700 mV 770 mV 15 nA 5 :A 100 nA - 3.5 pF 9 pF 6 pF -
Base saturation voltage - Basis-Sattigungsspannung 1)
Base-Emitter voltage - Basis-Emitter-Spannung 1)
Collector-Base cutoff current - Kollektorreststrom
Collector-Base Capacit. - Kollektor-Basis-Kapazitat Emitter-Base Capacitance - Emitter-Basis-Kapazitat
2 dB
10 dB 420 K/W 2)
Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Pinning - Anschlubelegung
6 5 4
BC856S ... BC858S
T1
T2
1
2
3
1 2
) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu
13

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